SiC devices offer a number of attractive charcteristics for high voltage power semiconductors when compared to commonly used Silicon (Si). Infineon‘s CoolSiC Schottky diodes ranging from 600V-1200V improve efficiency and solution costs for applications such as Server, Telecom Solar, Lighting, Consumer, PC Power and AC/DC.
The revolutionary CoolSiC 1200V SiC JFET family, in combination with the proposed Direct Drive Technology, represents Infineon’s leading edge solution to bring actual designs towards new and so far unattainable efficiency levels. Also available: High efficient IGBT power modules with SiC freewheeling diodes.

Hitachi High Voltage IGBTs have been corresponding to a wide range of applications such as railway applications and various power conveters, leading companies for domestic and overseas adopt them, since they were adopted as a railway application in 1992.
Will continue to contribute to the developing energy society by pursuing more easy-to-use, high-performance and high -quality products with leading-edge research and development.

Mitsubishi Electric Power modules contribute to increased efficiency and energy savings by condensing the power chip, required for motor control and power conversion, and the control circuits into one package and by applying inverter technology to all sorts of industrial equipment.